CRYSTAL GROWTH OF YBCO SUPERCONDUCTORS BY DIRECTIONAL SOLIDIFICATION PROCESSING
نویسندگان
چکیده
منابع مشابه
Modelling of physical phenomena on Si melt during crystal growth process by Directional solidification method
Numerical simulation is a comprehensive tool in modern process development which is extensively used for promotion of crystal growth processes. Multi-crystalline silicon is an important material with advantages of low-production cost and high conversion efficiency of PV solar cells. The control of grains as well as the grain boundaries is particularly important to the crystal quality and thus t...
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ژورنال
عنوان ژورنال: Journal of Advanced Science
سال: 1992
ISSN: 1881-3917,0915-5651
DOI: 10.2978/jsas.4.22